Boltzmann equation approach for transport in systems subject to microwave irradiation

Details Boltzmann equation approach for transport in systems subject to microwave irradiation Boltzmann equation approach for transport in systems subject to microwave irradiation

1995-12-13

arxiv.org/abs/cond-mat/9512100v1

Europhys. Lett. 33 (8), 629 (1996)

Physics

Condensed Matter

6 pages, bigtex (1 pictex figure). To appear in europhysics letters

Scientific paper

10.1209/epl/i1996-00390-9

We calculate the electronic transport properties of a system which is irradiated by a homogeneous microwave field. Within a Boltzmann equation approach, a general expression for the conductivity tensor is derived and evaluated for a quasi one-dimensional ballistic quantum wire and a two dimensional system with impurity scattering. For the latter, deviations from the Drude result are predicted for the conductivity tensor. This should be observable in systems where the scattering rate depends noticeably on the Fermi energy. The deviations are calculated explicitly for the case of a 2d Silicon layer, where they strongly depend on the microwave polarization and the Fermi energy.

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