Electric-Field-Induced Mott Insulating States in Organic Field-Effect Transistors

Details Electric-Field-Induced Mott Insulating States in Organic Field-Effect Transistors Electric-Field-Induced Mott Insulating States in Organic Field-Effect Transistors

2002-10-25

arxiv.org/abs/cond-mat/0210565v1

Phys. Rev. B 66, 214528 (2002)

Physics

Condensed Matter

Strongly Correlated Electrons

9 pages, 7 figures

Scientific paper

10.1103/PhysRevB.66.214528

We consider the possibility that the electrons injected into organic field-effect transistors are strongly correlated. A single layer of acenes can be modelled by a Hubbard Hamiltonian similar to that used for the kappa-(BEDT-TTF)(2)X family of organic superconductors. The injected electrons do not necessarily undergo a transition to a Mott insulator state as they would in bulk crystals when the system is half-filled. We calculate the fillings needed for obtaining insulating states in the framework of the slave-boson theory and in the limit of large Hubbard repulsion, U. We also suggest that these Mott states are unstable above some critical interlayer coupling or long-range Coulomb interaction.

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