Molecular Beam Epitaxy of Wurtzite (Ga,Mn)N Films on Sapphire(0001) Showing the Ferromagnetic Behaviour at Room Temperature

Details Molecular Beam Epitaxy of Wurtzite (Ga,Mn)N Films on Sapphire(0001) Showing the Ferromagnetic Behaviour at Room Temperature Molecular Beam Epitaxy of Wurtzite (Ga,Mn)N Films on Sapphire(0001) Showing the Ferromagnetic Behaviour at Room Temperature

2001-08-09

arxiv.org/abs/cond-mat/0108159v1

Physics

Condensed Matter

Materials Science

5 pages

Scientific paper

10.1016/S0022-0248(01)02183-2

Wurtzite (Ga,Mn)N films showing ferromagnetic behaviour at room temperature were successfully grown on sapphire(0001) substrates by molecular beam epitaxy using ammonia as nitrogen source. Magnetization measurements were carried out by a superconducting quantum interference device at the temperatures between 1.8K and 300K with magnetic field applied parallel to the film plane up to 7T. The magnetic-field dependence of magnetization of a (Ga,Mn)N film at 300K were ferromagnetic, while a GaN film showed Pauli paramagnetism like behaviour. The Curie temperatures of a (Ga,Mn)N film was estimated as 940K.

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