Anisotropic weakly localized transport in nitrogen-doped ultrananocrystalline diamond films

Details Anisotropic weakly localized transport in nitrogen-doped ultrananocrystalline diamond films Anisotropic weakly localized transport in nitrogen-doped ultrananocrystalline diamond films

2010-07-22

arxiv.org/abs/1007.3918v2

Phys.Rev. B 82 (2010) 184206

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

27 pages, 6 figures, To be published in Physical Review B

Scientific paper

10.1103/PhysRevB.82.184206

We establish the dominant effect of anisotropic weak localization (WL) in three dimensions associated with a propagative Fermi surface, on the conductivity correction in heavily nitrogen doped ultrananocrystalline diamond (UNCD) films based on magneto-resistance studies at low temperatures. Also, low temperature electrical conductivity can show weakly localized transport in 3D combined with the effect of electron-electron interactions in these materials, which is remarkably different from the conductivity in 2DWL or strong localization regime. The corresponding dephasing time of electronic wavefunctions in these systems described as ~ T^-p with p < 1, follows a relatively weak temperature dependence compared to the generally expected nature for bulk dirty metals having $p \geq 1$. The temperature dependence of Hall (electron) mobility together with an enhanced electron density has been used to interpret the unusual magneto-transport features and show delocalized electronic transport in these n-type UNCD films, which can be described as low-dimensional superlattice structures.

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