Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices

Details Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices

2008-04-16

arxiv.org/abs/0804.2667v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Motivated by observation of very high tunnel magnetoresistance (TMR) in Fe-MgO-Fe magnetic tunnel junction devices, we propose a theoretical model for these devices based on a single-band tight-binding approximation. An effort is made to capture the band dispersions over the two dimensional transverse Brillouin zone. In the transport direction, spin dependent Hamiltonian is prescribed for Delta_1 and Delta_5 bands. Non-equilibrium Green's function formalism is then used to calculate transport. Features like voltage dependence of TMR are captured quantitatively within this simple model and the trends match well with the ones predicted by ab-initio methods and experiments.

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