Measurements of Composite Fermion Conductivity Dependence on Carrier Density

Details Measurements of Composite Fermion Conductivity Dependence on Carrier Density Measurements of Composite Fermion Conductivity Dependence on Carrier Density

Publishing date

2005-03-17

URL

arxiv.org/abs/cond-mat/0503427v1

Journals

J. Phys.: Condens. Matter 16, 1095 (2004)

Science

Physics

Field

Condensed Matter

SubField

Mesoscale and Nanoscale Physics

Additional info

6 pages, 7 figures. We present the first experimental study of the carrier density dependence of the composite fermion conduct

Type

Scientific paper

Digital Object Identifier

10.1088/0953-8984/16/7/009

Abstract

We present the first experimental study of the carrier density dependence of the composite fermion conductivity $\sigma^{CF}_{xx}$ at Landau level filling factors $\nu= {1/2}$ and $\nu= {3/2}$ in high-quality front-gated GaAs/Al$_{0.33}$Ga$_{0.67}$As heterostructures. Extracting $\alpha$ from the power law ln$(\sigma^{CF}_{xx}) \propto$ ln$(n_e)^{\alpha}$ shows that $\alpha \approx 1$. The measured ${\alpha} \approx 1$ is placed between the predicted value 3/4 in the strong random magnetic field regime, and 3/2 in the weak random magnetic field regime. Comparisons between our results and theory are discussed.

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