Exact multi-electronic electron-concentration dependent ground-states for disordered two-dimensional two-band systems in presence of disordered hoppings and finite on-site random interactions

Details Exact multi-electronic electron-concentration dependent ground-states for disordered two-dimensional two-band systems in presence of disordered hoppings and finite on-site random interactions Exact multi-electronic electron-concentration dependent ground-states for disordered two-dimensional two-band systems in presence of disordered hoppings and finite on-site random interactions

2003-11-17

arxiv.org/abs/cond-mat/0311378v1

Phys. Rev. B69, 054204 (2004).

Physics

Condensed Matter

Disordered Systems and Neural Networks

Accepted for publication in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.69.054204

We report exact multielectronic ground-states dependent on electron concentration for quantum mechanical two-dimensional disordered two-band type many body models in the presence of disordered hoppings and disordered repulsive finite Hubbard interactions, in fixed lattice topology considered provided by Bravais lattices. The obtained ground-states loose their eigenfunction character for independent electron approximation, perturbatively are not connected to the non-interacting but disordered case, and describe a localization-delocalization transition driven by the electron concentration, being highly degenerated and paramagnetic.

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