Spontaneous Emission and Ultrafast Carrier Relaxation in InGaN Quantum Well with Metal Nanoparticles

Details Spontaneous Emission and Ultrafast Carrier Relaxation in InGaN Quantum Well with Metal Nanoparticles Spontaneous Emission and Ultrafast Carrier Relaxation in InGaN Quantum Well with Metal Nanoparticles

2011-09-24

arxiv.org/abs/1109.5252v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

This paper has been withdrawn by the author

Scientific paper

Subpicosecond wavelength non-degenerate differential transmission (DT) was used to observe the carrier relaxation mechanism in GaN based quantum well (QW) with and without metal nanoparticles (MNPs) in it. The spontaneous emission dominates the stimulated emission for above the GaN band edge excitation energy. We observed long decay times for Au-embedded sample and short decay times for Ag-embedded sample with respect to reference sample.

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