Snake states and Klein tunneling in a graphene Hall bar with a pn-junction

Details Snake states and Klein tunneling in a graphene Hall bar with a pn-junction Snake states and Klein tunneling in a graphene Hall bar with a pn-junction

2012-04-20

arxiv.org/abs/1204.4662v1

Appl. Phys. Lett. 100, 163121 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.4704667

The Hall (RH) and bend (RB) resistance of a graphene Hall bar structure containing a pn-junction are calculated when in the ballistic regime. The simulations are done using the billiard model. Introducing a pn-junction--dividing the Hall bar geometry in two regions--leads to two distinct regimes exhibiting very different physics: 1) both regions are of n-type and 2) one region is n-type and the other p-type. In regime (1) a 'Hall plateau'--an enhancement of the resistance--appears for RH. On the other hand, in regime (2), we found a negative RH, which approaches zero for large B. The bend resistance is highly asymmetric in regime (2) and the resistance increases with increasing magnetic field B in one direction while it reduces to zero in the other direction.

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