Experimental Study of Pressure Influence on Tunnel Transport into 2DEG

Details Experimental Study of Pressure Influence on Tunnel Transport into 2DEG Experimental Study of Pressure Influence on Tunnel Transport into 2DEG

2002-09-17

arxiv.org/abs/cond-mat/0209407v1

Physics

Condensed Matter

Scientific paper

We present the concept and the results of pilot measurements of tunneling in a system {Al/$\delta_{Si}$-GaAs} under pressure up to 2 GPa at 4.2 K. The obtained results may indicate the following: the barrier height for {Al/$\delta$-GaAs} equals to 0.86 eV at P=0 and its pressure coefficient is $3 meV/kbar$; charged impurity density in the delta-layer starts to drop from $4.5\times 10^{12} cm^{-2}$ down to $3.8\times 10^{12} cm^{-2}$ at about 1.5 GPa; metal-insulator transition may occur in 2DEG at about 2 GPa.

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