Mechanical control of spin-orbit splitting in GaAs and InGaAs epilayers

Details Mechanical control of spin-orbit splitting in GaAs and InGaAs epilayers Mechanical control of spin-orbit splitting in GaAs and InGaAs epilayers

2006-03-29

arxiv.org/abs/cond-mat/0603775v1

Phys. Rev. B 73, 241316(R) (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 5 figures

Scientific paper

10.1103/PhysRevB.73.241316

Time-resolved Kerr rotation spectroscopy as a function of pump-probe distance, voltage and magnetic field is used to measure the momentum-dependent spin splitting energies in GaAs and InGaAs epilayers. The strain of the samples can be reproducibly controlled in the cryostat using three- and four-point bending applied with a mechanical vise. We find that the magnitude of the spin splitting increases linearly with applied tension and voltage. A strain-drift diffusion model is used to relate the magnitude of the measured spin-orbit splitting to the amount of strain in the sample.

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