Comment on "Performance of a spin based insulated gate field effect transistor" [cond-mat/0603260] [cond-mat/0603260]

Details Comment on "Performance of a spin based insulated gate field effect transistor" [cond-mat/0603260] [cond-mat/0603260] Comment on "Performance of a spin based insulated gate field effect transistor" [cond-mat/0603260] [cond-mat/0603260]

2006-04-23

arxiv.org/abs/cond-mat/0604532v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a
particular spin based field effect transistor (SPINFET), which they have
analyzed, will have a lower threshold voltage, lower switching energy and lower
leakage current than a comparable metal oxide semiconductor field effect
transistor (MOSFET). Here, we show that all three claims of HF are invalid.

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