Theoretical study of Ga-based nanowires and the interaction of Ga with single-wall carbon nanotubes

Details Theoretical study of Ga-based nanowires and the interaction of Ga with single-wall carbon nanotubes Theoretical study of Ga-based nanowires and the interaction of Ga with single-wall carbon nanotubes

2005-11-16

arxiv.org/abs/cond-mat/0511401v1

PHYSICAL REVIEW B 70, 155305 (2004)

Physics

Condensed Matter

Other Condensed Matter

8 pages, 8 figures

Scientific paper

10.1103/PhysRevB.70.155305

Gallium displays physical properties which can make it a potential element to produce metallic nanowires and high-conducting interconnects in nanoelectronics. Using first-principles pseudopotential plane method we showed that Ga can form stable metallic linear and zigzag monatomic chain structures. The interaction between individual Ga atom and single-wall carbon nanotube (SWNT) leads to a chemisorption bond involving charge transfer. Doping of SWNT with Ga atom gives rise to donor states. Owing to a significant interaction between individual Ga atom and SWNT, continuous Ga coverage of the tube can be achieved. Ga nanowires produced by the coating of carbon nanotube templates are found to be stable and high conducting.

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