Single electron transistors with high quality superconducting niobium islands

Details Single electron transistors with high quality superconducting niobium islands Single electron transistors with high quality superconducting niobium islands

2001-11-30

arxiv.org/abs/cond-mat/0111580v1

APL Vol. 80, No. 15, pp.2776-2778 (2002)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures

Scientific paper

10.1063/1.1465526

Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consisting of the thermostable polymer polyethersulfone (PES) and germanium, high quality niobium patterns with good superconducting properties and a gap energy of up to 2Delta = 2.5 meV for the niobium were achieved. The I(U) characteristics of the transistors show special features due to tunneling of single Cooper pairs and significant gate modulation in both the superconducting and the normal state.

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