Interaction and disorder in bilayer counterflow transport at filling factor one

Details Interaction and disorder in bilayer counterflow transport at filling factor one Interaction and disorder in bilayer counterflow transport at filling factor one

2005-04-05

arxiv.org/abs/cond-mat/0504119v1

Phys. Rev. B 72, 081307 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.72.081307

We study high mobility, interacting GaAs bilayer hole systems exhibiting counterflow superfluid transport at total filling factor $\nu=1$. As the density of the two layers is reduced, making the bilayer more interacting, the counterflow Hall resistivity ($\rho_{xy}$) decreases at a given temperature, while the counterflow longitudinal resistivity ($\rho_{xx}$), which is much larger than $\rho_{xy}$, hardly depends on density. On the other hand, a small imbalance in the layer densities can result in significant changes in $\rho_{xx}$ at $\nu=1$, while $\rho_{xy}$ remains vanishingly small. Our data suggest that the finite $\rho_{xx}$ at $\nu=1$ is a result of mobile vortices in the superfluid created by the ubiquitous disorder in this system.

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