Effect of temperature and bias voltage on the conductance distribution of disordered 1d quantum wires

Details Effect of temperature and bias voltage on the conductance distribution of disordered 1d quantum wires Effect of temperature and bias voltage on the conductance distribution of disordered 1d quantum wires

2005-07-14

arxiv.org/abs/cond-mat/0507339v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 4 figures. To appear in Europhysics Letters

Scientific paper

10.1209/epl/i2005-10172-5

The statistical properties of the conductance of one dimensional disordered systems are studied at finite bias voltage V and temperature T, in an independent-electron picture. We calculate the complete distribution of the conductance P(G) in different regimes of V, T within a statistical model of resonant tunneling transmission. We find that P(G) changes from the well-known log-normal distribution at T=0 in the linear response regime to a Gaussian distribution at large V, T. The dependence on T and V of average quantities such as < G >, < ln G > is analyzed as well. Our analytical results are confirmed by numerical simulations. We also discuss the limits of validity of the model and conclude that the effects of finite T, V presented here should be observable.

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