Nonequilibrium spin distribution in single-electron transistor

Details Nonequilibrium spin distribution in single-electron transistor Nonequilibrium spin distribution in single-electron transistor

1998-04-27

arxiv.org/abs/cond-mat/9804292v1

Phys. Rev. B 59, 89 (1999)

Physics

Condensed Matter

11 pages, 2 eps figures

Scientific paper

10.1103/PhysRevB.59.89

Single-electron transistor with ferromagnetic outer electrodes and nonmagnetic island is studied theoretically. Nonequilibrium electron spin distribution in the island is caused by tunneling current. The dependencies of the magnetoresistance ratio $\delta$ on the bias and gate voltages show the dips which are directly related to the induced separation of Fermi levels for electrons with different spins. Inside a dip $\delta$ can become negative.

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