Thermoelectric properties of junctions between metal and strongly correlated semiconductor

Details Thermoelectric properties of junctions between metal and strongly correlated semiconductor Thermoelectric properties of junctions between metal and strongly correlated semiconductor

2000-09-24

arxiv.org/abs/cond-mat/0009370v1

Applied Physics Letters 77, 3033 (2000).

Physics

Condensed Matter

Strongly Correlated Electrons

RevTeX 3.0, 4 pages, 3 postscript figures. To be published in Applied Physics Letters

Scientific paper

10.1063/1.1323738

We propose a junction of metal and rare-earth compound semiconductor as the basis for a possible efficient low-temperature thermoelectric device. If an overlayer of rare earth atoms differing from the bulk is placed at the interface, very high values of the figure of merit ZT can be reached at low temperature. This is due to sharp variation of the transmission coefficient of carriers across the junction at a narrow energy range, which is intrinsically linked to the localized character of the overlayer f-orbital.

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