Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

Details Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

2010-01-14

arxiv.org/abs/1001.2449v1

Phys. Rev. B 81, 104402 (2010)

Physics

Condensed Matter

Materials Science

3 figures, submitted to Physical Review B

Scientific paper

10.1103/PhysRevB.81.104402

We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface layer in addition to the biassed bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature.

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