Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

Details Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

2006-11-10

arxiv.org/abs/cond-mat/0611269v2

Appl. Phys. Lett. 90, 053108 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1063/1.2435957

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

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