Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices

Details Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices

2010-03-23

arxiv.org/abs/1003.4543v1

Nano Research, 3, 98 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1007/s12274-010-1013-5

We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobility as high as 120,000 cm^2/Vs.

Affiliated with

Also associated with

No associations

Rating

Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-56474