Spectral shape analysis of ultraviolet luminescence in \textit{n}-type ZnO:Ga

Details Spectral shape analysis of ultraviolet luminescence in \textit{n}-type ZnO:Ga Spectral shape analysis of ultraviolet luminescence in \textit{n}-type ZnO:Ga

2005-10-07

arxiv.org/abs/cond-mat/0510166v1

J. Appl. Phys. vol. 98, 093520, (2005)

Physics

Condensed Matter

Materials Science

5 pages, 3 figures, 1 table, to appear in the Nov. 1st issue of J. Appl. Phys. (Scheduled Issue)

Scientific paper

10.1063/1.2127167

Thin films of laser molecular-beam epitaxy grown \textit{n}-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the lineshape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.

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