Overhauser frequency shifts in semiconductor nanostructures

Details Overhauser frequency shifts in semiconductor nanostructures Overhauser frequency shifts in semiconductor nanostructures

2008-07-07

arxiv.org/abs/0807.0987v1

Physics

Condensed Matter

Materials Science

Scientific paper

We calculate the Overhauser frequency shifts in semiconductor nanostructures resulting from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins. The frequency shifts depend on the electronic local density of states and spin polarization as well as the electronic and nuclear spin relaxation mechanisms. Unlike previous calculations, our method accounts for the electron confinement in low dimensional semiconductor nanostructures, resulting in both nuclear spin polarizations and Overhauser shifts that are strongly dependent on position. Our results explain previously puzzling measurements of Overhauser shifts in an Al$_x$Ga$_{1-x}$As parabolic quantum well by showing the connection between the electron spin lifetime and the frequency shifts.

Affiliated with

Also associated with

No associations

Rating

Overhauser frequency shifts in semiconductor nanostructures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Overhauser frequency shifts in semiconductor nanostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Overhauser frequency shifts in semiconductor nanostructures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-561210