Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors

Details Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors Origin of bulk uniaxial anisotropy in zinc-blende dilute magnetic semiconductors

2012-02-15

arxiv.org/abs/1202.3295v1

Physics

Condensed Matter

Materials Science

5 pages, 1 figure

Scientific paper

It is demonstrated that the nearest neighbor Mn pair on the GaAs (001) surface has a lower energy for the [-110] direction comparing to the [110] case. According to the group theory and the Luttinger's method of invariants, this specific Mn distribution results in bulk uniaxial in-plane and out-of-plane anisotropies. The sign and magnitude of the corresponding anisotropy energies determined by a perturbation method and ab initio computations are consistent with experimental results.

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