Supersymmetry Across Nanoscale Heterojunction

Details Supersymmetry Across Nanoscale Heterojunction Supersymmetry Across Nanoscale Heterojunction

2010-02-13

arxiv.org/abs/1002.2732v1

Physics Letters A 374 (2010) 2397-2400

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 2 figures

Scientific paper

We argue that supersymmetric transformation could be applied across the heterojunction formed by joining of two mixed semiconductors. A general framework is described by specifying the structure of ladder operators at the junction for making quantitative estimation of physical quantities. For a particular heterojunction device, we show that an exponential grading inside a nanoscale doped layer is amenable to exact analytical treatment for a class of potentials distorted by the junctions through the solutions of transformed Morse-Type potentials.

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