Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2006-11-15
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
5 pages, 3 figures, submitted to Phys. Rev. Lett
Scientific paper
10.1103/PhysRevLett.99.056601
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed two-fold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well.
Fabian Jaroslav
Matos-Abiague Alex
Moser Jan
Schuh Dieter
Wegscheider Werner
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