The importance of thermal disorder and electronic occupation for the T-dependence of the optical conductivity in FeSi and MnSi

Details The importance of thermal disorder and electronic occupation for the T-dependence of the optical conductivity in FeSi and MnSi The importance of thermal disorder and electronic occupation for the T-dependence of the optical conductivity in FeSi and MnSi

2007-07-04

arxiv.org/abs/0707.0626v1

Physics

Condensed Matter

Materials Science

(5 pages, 4 figures)

Scientific paper

10.1103/PhysRevB.76.205105

The spectral weight (SW) for optical transitions in FeSi and MnSi are calculated as function of temperature by means of LMTO-LDA band calculations. The main effects, caused by structural disorder and electronic Fermi-Dirac distribution, act oppositely on the T-dependence of the SW, while the variation of the magnetic moment in MnSi has only a minor effect. The calculations agree with the experimental findings of an increasing SW in FeSi and a decreasing SW in MnSi as function of T. The results can be understood from the change of the bandstructure with disorder.

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