Sub-Poissonian phononic population in a nanoelectromechanical system

Details Sub-Poissonian phononic population in a nanoelectromechanical system Sub-Poissonian phononic population in a nanoelectromechanical system

2007-07-25

arxiv.org/abs/0707.3680v2

Revised version published in New J. Phys. 10 No 2, 023008 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1088/1367-2630/10/2/023008

Population of a phononic mode coupled to a single-electron transistor in the sequential tunneling regime is discussed for the experimentally realistic case of intermediate electron-phonon coupling. Features like a sub-Poissonian bosonic distribution are found in regimes where electron transport drives the oscillator strongly out of equilibrium with only few phonon states selectively populated. The electron Fano factor is compared to fluctuations in the phonon distribution, showing that all possible combinations of sub- and super-Poissonian character can be realized.

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