Spintronic devices from bilayer graphene in contact to ferromagnetic insulators

Details Spintronic devices from bilayer graphene in contact to ferromagnetic insulators Spintronic devices from bilayer graphene in contact to ferromagnetic insulators

2011-05-18

arxiv.org/abs/1105.3609v2

Phys. Rev. B 84, 125438 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 7 figures, revised version, a figure added

Scientific paper

Graphene-based materials show promise for spintronic applications due to their potentially large spin coherence length. On the other hand, because of their small intrinsic spin-orbit interaction, an external magnetic source is desirable in order to perform spin manipulation. Because of the flat nature of graphene, the proximity interaction with a ferromagnetic insulator (FI) surface seems a natural way to introduce magnetic properties into graphene. Exploiting the peculiar electronic properties of bilayer graphene coupled with FIs, we show that it is possible to devise very efficient gate-tunable spin-rotators and spin-filters in a parameter regime of experimental feasibility. We also analyze the composition of the two spintronic building blocks in a spin-field-effect transistor.

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