Field Effect Transistor Based on KTaO3 Perovskite

Details Field Effect Transistor Based on KTaO3 Perovskite Field Effect Transistor Based on KTaO3 Perovskite

2003-12-12

arxiv.org/abs/cond-mat/0312308v1

Physics

Condensed Matter

Strongly Correlated Electrons

3 pages, 3 Postscript figures, submitted to Appl.Phys.Lett

Scientific paper

10.1063/1.1703841

An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field effect mobility was almost temperature independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics.

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