Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 - A Promise for Room Temperature Applications

Details Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 - A Promise for Room Temperature Applications Exceptionally Weak Electron-Phonon Coupling on the Surface of the Topological Insulator Bi2Se3 - A Promise for Room Temperature Applications

2011-09-16

arxiv.org/abs/1109.3638v1

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, 5 figures

Scientific paper

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these states should have to remain coherent at ambient temperatures. Here, we studied temperature dependence of the electronic structure and the scattering rates on the surface of a model topological insulator, Bi2Se3, by high resolution angle-resolved photoemission spectroscopy. We found an extremely weak broadening of the topological surface state with temperature and no anomalies in the state's dispersion, indicating exceptionally weak electron-phonon coupling. Our results demonstrate that the topological surface state is protected not only from elastic scattering on impurities, but also from scattering on low-energy phonons, suggesting that topological insulators could serve as a basis for room temperature electronic devices.

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