Relativistic First-Principles Full Potential Calculations of Electronic and Structural Properties of group IIIA-VA semiconductors based on Zeroth Order Regular Approximation (ZORA) Hamiltonian

Details Relativistic First-Principles Full Potential Calculations of Electronic and Structural Properties of group IIIA-VA semiconductors based on Zeroth Order Regular Approximation (ZORA) Hamiltonian Relativistic First-Principles Full Potential Calculations of Electronic and Structural Properties of group IIIA-VA semiconductors based on Zeroth Order Regular Approximation (ZORA) Hamiltonian

2010-05-04

arxiv.org/abs/1005.0615v1

Physics

Condensed Matter

Materials Science

Scientific paper

First-principles full potential calculations based on Zeroth Order Regular Approximation (ZORA) relativistic Hamiltonian and Kohn-Sham form of Density Functional Theory (KS DFT) in local spin density approximation (LSDA) are reported for group IIIA-VA (InAs, GaAs, InP) semiconductors. The effects of relativity are elucidated by performing fully relativistic, scalar relativistic, and nonrelativistic calculations. Structural and electronic band structure parameters are determined including split-off energies, band gaps, and deformation potentials. The nature of chemical bonding at the equilibrium and under hydrostatic strain is investigated using projected (PDOS) and overlap population weighted density of states (OPWDOS). ZORA results are compared with Augmented Plane Wave plus Local Orbitals method (APW+lo), and experiment. Viability and robustness of the ZORA relativistic Hamiltonian for investigation of electronic and structural properties of semiconductors is established.

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