Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature

Details Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature Resonant tunneling through zero-dimensional impurity states: Effects of a finite temperature

2000-09-22

arxiv.org/abs/cond-mat/0009349v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

2 pages, 3 figures; 25th International Conference on the Physics of Semiconductors, Osaka, Japan, September 17-22, 2000

Scientific paper

We have performed temperature dependent tunneling experiments through a single impurity in an asymmetric vertical double barrier tunneling structure. In particular in the charging direction we observe at zero magnetic field a clear shift in the onset voltage of the resonant tunneling current through the impurity. With a magnetic field applied the shift starts to disappear. The experimental observations are explained in terms of resonant tunneling through a spin degenerate impurity level.

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