Activation mechanisms in sodium-doped Silicon MOSFETs

Details Activation mechanisms in sodium-doped Silicon MOSFETs Activation mechanisms in sodium-doped Silicon MOSFETs

2005-12-02

arxiv.org/abs/cond-mat/0512039v7

J. Phys.: Condens. Matter 19, 226216 (2007)

Physics

Condensed Matter

Strongly Correlated Electrons

published in J. Phys. : Condens. Matter

Scientific paper

10.1088/0953-8984/19/22/226216

We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given.

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