Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

Details Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

2009-05-27

arxiv.org/abs/0905.4437v1

Physics

Condensed Matter

Other Condensed Matter

19 pages and 8 figures, submmitted to JMMM

Scientific paper

This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the cross-sectional area of the free-layer is here computed dinamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main postulated hypothesis, which states that the current density vector is perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry for the switching. Furthermore, we found out that the switching processes are characterized by well defined localized pre-switching oscillation modes.

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