Strong enhancement of the valley splitting in a 2D electron system in silicon

Details Strong enhancement of the valley splitting in a 2D electron system in silicon Strong enhancement of the valley splitting in a 2D electron system in silicon

2002-02-27

arxiv.org/abs/cond-mat/0202505v2

Phys. Rev. B 67, 113305 (2003)

Physics

Condensed Matter

As published. 4 pages, 3 figures

Scientific paper

10.1103/PhysRevB.67.113305

Using magnetocapacitance data, we directly determine the chemical potential jump in a strongly correlated 2D electron system in silicon when the filling factor traverses the valley gap at \nu=1 and \nu=3. The data yield a valley gap that is strongly enhanced compared to the single-particle value and increases LINEARLY with magnetic field. This result has not been explained by existing theories.

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