The spin-torque transistor

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

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to be published in Applied Physics Letters

Scientific paper

10.1063/1.1579122

A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin-valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required.

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