Modelling of Optical Detection of Spin-Polarized Carrier Injection into Light-Emitting Devices

Details Modelling of Optical Detection of Spin-Polarized Carrier Injection into Light-Emitting Devices Modelling of Optical Detection of Spin-Polarized Carrier Injection into Light-Emitting Devices

2003-11-05

arxiv.org/abs/cond-mat/0311115v2

Phys. Rev. B 69, 085322 (2004)

Physics

Condensed Matter

15 pages, 7 figures, replaced by revised version. To appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.69.085322

We investigate the emission of multimodal polarized light from Light Emitting Devices due to spin-aligned carriers injection. The results are derived through operator Langevin equations, which include thermal and carrier-injection fluctuations, as well as non-radiative recombination and electronic g-factor temperature dependence. We study the dynamics of the optoelectronic processes and show how the temperature-dependent g-factor and magnetic field affect the polarization degree of the emitted light. In addition, at high temperatures, thermal fluctuation reduces the efficiency of the optoelectronic detection method for measuring spin-polarization degree of carrier injection into non-magnetic semicondutors.

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