Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes

Details Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes

2011-05-24

arxiv.org/abs/1105.4811v2

Physical Review X 2, 011002 (2012)

Physics

Condensed Matter

Materials Science

10 pages, 7 figures, 1 table (Creative Commons Attribution 3.0 License.)

Scientific paper

10.1103/PhysRevX.2.011002

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and conventional semiconductors. When chemical vapor deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC and GaN semiconductor substrates, there is a strong van der Waals attraction that is accompanied by charge transfer across the interface and the formation of a rectifying (Schottky) barrier. Thermionic emission theory in conjunction with the Schottky-Mott model within the context of bond-polarization theory provides a surprisingly good description of the electrical properties. Applications, such as to sensors where in forward bias there is exponential sensitivity to changes in the Schottky barrier height due to the presence of absorbates on the graphene or to analogue devices for which Schottky barriers are integral components are promising because of graphene's mechanical stability, its resistance to diffusion, its robustness at high temperatures and its demonstrated capability to embrace multiple functionalities.

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