Evolution of spectral function in a doped Mott insulator : surface vs. bulk contributions

Details Evolution of spectral function in a doped Mott insulator : surface vs. bulk contributions Evolution of spectral function in a doped Mott insulator : surface vs. bulk contributions

1998-03-11

arxiv.org/abs/cond-mat/9803138v1

Physics

Condensed Matter

Strongly Correlated Electrons

Revtex, 4 pages, 3 postscript figures. To appear in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.80.2885

We study the evolution of the spectral function with progressive hole doping in a Mott insulator, $La_{1-x}Ca_xVO_3$ with $x$ = 0.0 - 0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter, $U/W$, is shown to describe consistently the spectral evolution.

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