Modeling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects

Details Modeling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects Modeling of dielectric hysteresis loops in ferroelectric semiconductors with charged defects

2004-08-30

arxiv.org/abs/cond-mat/0408647v1

Physics

Condensed Matter

Materials Science

21 pages, 10 figures, sent to Journal of Physics: Condensed Matter

Scientific paper

10.1088/0953-8984/16/49/010

We have proposed the phenomenological description of dielectric hysteresis loops in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach and shown that the macroscopic state of the aforementioned inhomogeneous system can be described by three coupled equations for three order parameters. Both the experimentally observed coercive field values well below the thermodynamic one and the various hysteresis loop deformations (constricted and double loops) have been obtained in the framework of our model. The obtained results quantitatively explain the ferroelectric switching in such ferroelectric materials as thick PZT films.

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