Carrier relaxation in Si/SiO$_2$ quantum dots

Details Carrier relaxation in Si/SiO$_2$ quantum dots Carrier relaxation in Si/SiO$_2$ quantum dots

2008-05-22

arxiv.org/abs/0805.3451v1

Physics

Condensed Matter

Materials Science

8 pages, 2 figures, submitted as an extended abstract to the E-MRS Spring Meeting 2008

Scientific paper

Carrier relaxation due to both optical and nonradiative intraband transitions
in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined
holes with optical phonons has been studied. The Huang-Rhys factor is
calculated for such transitions. The probability of intraband transition of a
confined hole emitting several optical phonons is estimated.

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