High-energy long-lived resonance of electrons in fractal-like semiconductor heterostructures

Details High-energy long-lived resonance of electrons in fractal-like semiconductor heterostructures High-energy long-lived resonance of electrons in fractal-like semiconductor heterostructures

2010-10-07

arxiv.org/abs/1010.1336v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures. Figures of better resolution are available upon request

Scientific paper

A fractal-like alignment of quantum wells is shown to accommodate resonant
states with long lifetimes. For the parameters of the semiconductor
heterostructure GaAs/Al$_{0.4}$Ga$_{0.6}$As with the well depth 300meV, a
resonant state of the energy as high as 44meV with the lifetime as long as
2.8\{mu}s is shown to be achievable.

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