Partially confined excitons in semiconductor nanocrystals with a finite size dielectric interface

Details Partially confined excitons in semiconductor nanocrystals with a finite size dielectric interface Partially confined excitons in semiconductor nanocrystals with a finite size dielectric interface

1999-09-01

arxiv.org/abs/cond-mat/9909022v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

11 pages, 6 figures, submitted to Phys. Rev. B jan/99

Scientific paper

The combined effect of finite potential barriers and dielectric mismatch between dot and matrix on excitonic properties of semiconductor quantum dots has been studied. To avoid the unphysical divergence in the self-polarization energy which arises for the simplest and profusely adopted step-like model of the dielectric interface, we proposed a realistic (finite size) smooth profile for the dielectric interface. We have found that the excitonic binding energy can be either higher than the corresponding one to complete confinement by infinite barriers or essentially zero for a wide range of dot sizes depending on the thickness of the dielectric interface.

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