Mobility gap in intermediate valent TmSe

Details Mobility gap in intermediate valent TmSe Mobility gap in intermediate valent TmSe

2005-09-26

arxiv.org/abs/cond-mat/0509652v1

Europhys. Lett. 72, 103 (2005)

Physics

Condensed Matter

Strongly Correlated Electrons

Scientific paper

10.1209/epl/i2005-10207-y

The infrared optical conductivity of intermediate valence compound TmSe reveals clear signatures for hybridization of light $d$- and heavy f-electronic states with m* ~ 1.6 m_0 and m* ~ 16 m_0, respectively. At moderate and high temperatures, the metal-like character of the heavy carriers dominate the low-frequency response while at low temperatures (T_N < T < 100 K) a gap-like feature is observed in the conductivity spectra below 10 meV which is assigned to be a mobility gap due to localization of electrons on local Kondo singlets, rather than a hybridization gap in the density of states.

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