Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2010-08-18
IEEE Trans. on Electron Devices, Vol.53, pp.2364-2369, September 2006
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
Journal Paper
Scientific paper
A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p+-regions as the gate, the proposed device uses the Schottky gate formed on the silicon planar surface for injecting minority carriers into the drift region. The SBMFET is demonstrated to have improved current gain, identical breakdown voltage and ON-voltage drop when compared to the conventional BMFET. Since the fabrication of the SBMFET is much simpler and obliterates the need for deep thermal diffusion of P+-gates, the SBMFET is expected to be of great practical importance in medium-power high-current switching applications.
Bahl Harsh
Kumar Jagadesh M.
No associations
LandOfFree
New Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET): Design and Analysis using Two-dimensional Simulation does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with New Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET): Design and Analysis using Two-dimensional Simulation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and New Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET): Design and Analysis using Two-dimensional Simulation will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-504081