A novel site-controlled quantum dot system with high uniformity and narrow excitonic emission

Details A novel site-controlled quantum dot system with high uniformity and narrow excitonic emission A novel site-controlled quantum dot system with high uniformity and narrow excitonic emission

2010-01-08

arxiv.org/abs/1001.1326v1

Superlattices and microstructures, volume 47, january 2010, page 78-82

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

PLMCN9 conference proceedings

Scientific paper

We report on the optical properties of a newly developed site-controlled InGaAs Dots in GaAs barriers grown in pre-patterned pyramidal recesses by metalorganic vapour phase epitaxy. The inhomogeneous broadening of excitonic emission from an ensemble of quantum dots is found to be extremely narrow, with a standard deviation of 1.19 meV. A dramatic improvement in the spectral purity of emission lines from individual dots is also reported (18-30 ueV) when compared to the state-of-the-art for site controlled quantum dots.

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