Physics – Condensed Matter – Materials Science
Scientific paper
2003-07-25
Physics
Condensed Matter
Materials Science
4 pages, 2 figures
Scientific paper
New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM) through a Schottky barrier modified with very thin heavily doped interfacial layer. We show that electrons with a certain spin projection are extracted from S, while electrons with the opposite spins are accumulated in S. The spin density increases and spin penetration depth decreases with current.
Bratkovsky Alexander M.
Osipov Vasiliy
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