Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics

Details Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics

1999-08-31

arxiv.org/abs/cond-mat/9908463v1

Physics

Condensed Matter

Materials Science

REVTeX, 3 pages, 3 figures, to appear in Applied Physics Letters

Scientific paper

10.1063/1.124965

We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze the kinetics of the transformation and the grain size distribution of the product material, finding a good overall agreement between our model and available experimental data. The information so obtained could help to relate the mentioned experimental deviations due to preexisting anisotropy along some regions, to certain degree of crystallinity of the amorphous phases during deposition, or more generally to impurities or roughness of the substrate.

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