Strain-induced single-domain growth of epitaxial SrRuO3 layers on SrTiO3: a high-temperature x-ray diffraction study

Details Strain-induced single-domain growth of epitaxial SrRuO3 layers on SrTiO3: a high-temperature x-ray diffraction study Strain-induced single-domain growth of epitaxial SrRuO3 layers on SrTiO3: a high-temperature x-ray diffraction study

2007-05-02

arxiv.org/abs/0705.0390v1

Physics

Condensed Matter

Materials Science

5 pages, 3 figures

Scientific paper

10.1063/1.2771087

Temperature dependent structural phase transitions of SrRuO3 thin films epitaxially grown on SrTiO3(001) single crystal substrates have been studied using high-resolution x-ray diffraction. In contrast to bulk SrRuO3, coherently strained epitaxial layers do not display cubic symmetry up to ~730 oC and remain tetragonal. Such behavior is believed to be induced by compressive strain between the SrRuO3 layer and SrTiO3 substrate due to lattice mismatch. The tetragonal symmetry during growth explains the single domain growth on miscut SrTiO3 substrates with step edges running along the [100] or [010] direction.

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